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Volume 31, Issue 6
November 2013
Research Article| October 15 2013
Marcus Rommel;
Marcus Rommel a)
Max Planck Institute for Solid State Research
, Heisenbergstr. 1, 70569 Stuttgart,
Germany
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Jürgen Weis
Jürgen Weis
Max Planck Institute for Solid State Research
, Heisenbergstr. 1, 70569 Stuttgart,
Germany
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Author & Article Information
a)
Electronic mail: m.rommel@fkf.mpg.de
J. Vac. Sci. Technol. B 31, 06F102 (2013)
Article history
Received:
June 27 2013
Accepted:
September 03 2013
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Citation
Marcus Rommel, Jürgen Weis; Hydrogen silsesquioxane bilayer resists—Combining high resolution electron beam lithography and gentle resist removal. J. Vac. Sci. Technol. B 1 November 2013; 31 (6): 06F102. https://doi.org/10.1116/1.4822136
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Hydrogen silsesquioxane (HSQ) is one of the leading resists for high resolution electron beam lithography. For example, lines and spaces with 12 nm pitch are reported in ultrathin HSQ. However, to take advantage of this HSQ capability for functional devices, the pattern defined in the resist has to be transferred to the underlaying substrate—either by etching or material deposition. The common remover for HSQ is hydrofluoric acid (HF), which is not suitable for all substrates. To avoid HF as remover, bilayer resist systems were developed by different groups combining the high resolution capabilities of HSQ with the possibility to remove the resist with an organic solvent. In this paper, three different types of sacrificial layers including chrome, Novolak resin, and poly methyl methacrylate are reviewed and compared.
Topics
Electrical conductivity, Plasma processing, Etching, Materials heat treatment, Machining, Polymers, Metal deposition, Spin coating, Electron-beam lithography, Acids
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© 2013 American Vacuum Society.
2013
American Vacuum Society
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